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Effect of Dispersed SiC Nano-particles in Eutectic Sn58Bi Solder Micro-Bumps of Wafer Level Package by Electroplating

机译:分散SiC纳米颗粒在电镀通过电镀晶片水平封装的共晶SN58BI焊料微凸块中的影响

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In this paper, the effect of SiC nano-particles in micro-solder bump was investigated. SiC nano-particles were dispersed by using ultrasonic homogenizer in plating solution of eutectic Sn58Bi solder and codeposited in eutectic Sn58Bi solder bumps. Solder bumps were fabricated on patterned wafer. Prepared samples were aged for 100, 256 and 400hrs at 100 ?°C respectively, and then the observation of microstructure and shear test were carried out to examine SiC particles effects. There was little effect on the growth of intermetallic compound (IMC) between solder bumps and Cu pad; however, microstructure became fine and the value of shear strength increase as much value as 13% due to the suppression of grain coarsening by SiC particles.
机译:本文研究了SiC纳米粒子在微焊料凸块中的影响。通过使用超声均化器在共晶SN58BI焊料的电镀溶液中分散SiC纳米颗粒,并在共晶的SN58Bi焊料凸块中进行批量。在图案化的晶片上制造了焊料凸块。在100℃下,制备的样品在100℃下老化为100,256和400Hr,然后进行微观结构和剪切试验以检查SiC颗粒效应。对焊料凸块和Cu垫之间的金属间化合物(IMC)的生长几乎没有影响;然而,由于SiC颗粒抑制晶粒粗化,微观结构变得精细,剪切强度的值增加到13%。

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