Vector Modulator Phase Shifters in 130-nm SiGe BiCMOS Technology for 5G Applications

摘要

This paper presents two approaches for designing vector modulators (VMs) implemented in SiGe BiCMOS technology for 5G applications with 26.5-29.5 GHz band of interest. The first solution exploits reactive matching networks to achieve a peak gain of 7.5 dB, while the second minimizes the area occupation with a core size of 0.32 0.38 mm^{2. Phase shifts from 0° to 360° are achieved with a low×phase and gain error.}