SAT at 150C for automotive radar. In or'/> A 76GHz CMOS Low-PDC Transmitter with 15dBm PSAT at 150C for Automotive Radar
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A 76GHz CMOS Low-PDC Transmitter with 15dBm PSAT at 150C for Automotive Radar

机译:具有150℃的76GHz CMOS低PDC发射器,用于汽车雷达150℃

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In this paper, we report a 76 GHz transmitter with 15 dBm PSAT at 150C for automotive radar. In order to realize high PSAT and low PDC at high temperature, we adopted a new circuit configuration. The transmitter doubles the frequency of the signal from the PLL (38 GHz) and outputs the signal of 76 GHz. Unlike conventional transmitters, we divided the signal before the frequency doubler and combined the signals at the output of the PA. With this configuration, it is possible to reduce the PDC of the 76 GHz-band amplifier. The proposed transmitter demonstrates PSAT of more than 15 dBm at 150C with PDC of 0.37 W. The transmitter is fabricated in 40-nm CMOS and the area is 340-um x 1120-um.
机译:在本文中,我们报告的15dBm P上的76 GHz的发射器 SAT 在150℃的汽车雷达。为了实现高磷 SAT 和低磷 DC 在高温下,我们采用了一种新的电路结构。发射机加倍从PLL(38千兆赫)的信号的频率,并输出76千兆赫的信号。不同于传统的发射机,我们倍频前划分的信号和合成后的信号在PA的输出。利用这种结构,可以减少在P DC 的76千兆赫频带放大器。提出的发射机表明超过15 dBm为PSAT在以P 150 DC 0.37 W的发射器被制造在40纳米CMOS和面积是340-UM X 1120-UM。

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