A 95–135 GHz Low Power Dicke Radiometer in SiGe BiCMOS Technology

摘要

This paper presents a low-noise and low power calibrated radiometer (Dicke-radiometer), operating at 95–135 GHz and developed in 0.12 µm SiGe BiCMOS technology. The chip consists of single-pole double-throw (SPDT) switch, low noise amplifier (LNA) and power detector (PD). The SPDT utilizes reverse saturated HBTs and shows measured insertion loss of 2.1 dB and an isolation of 32 dB at 115 GHz. The four-stage LNA provides 29 dB peak gain with 3 dB bandwidth of 60 GHz and minimum noise figure of 6.1 dB. The square-law power detector achieves responsivity of 11.8 kV/W and 2.1 pW/√Hz noise equivalent power (NEP) of. The integrated receiver results in peak responsivity of 6.4 MV/W and temperature resolution (NETD) of 0.12 K (30 mS integration time) with 25 mW power consumption.