1.5 V-operation GaAs spike-gate power FET with 65 power-addedefficiency

摘要

A GaAs power FET with a spike-gate has been developed for the highefficiency operation under the extremely low voltage supply of 1.5 V.The spike-gate provides both the low on-resistance of 2.2 Ω/mm andthe high transconductance of 180 mS/mm without reducing the outputimpedance nor increasing the gate resistance. The implemented deviceachieved the output power of 31.5 dBm with 65% power-added efficiency atthe frequency of 900 MHz. Sub-quarter micron footprints of thespike-gate were defined by using the phase shift lithography