Pure logic CMOS based embedded Non-Volatile Random Access Memory for low power RFID application

摘要

Based on a novel two-dimension array architecture, a 1.8V 0.44mm2 1Kbits embedded Non-Volatile Random Access Memory (NVRAM) IP is developed with 0.18μm standard logic CMOS process. Several high voltage solutions and circuits are proposed to improve the reliability and safety of the system. Furthermore, the power consumption for read and write operations are controlled under 312μA and 88μA respectively. The merits make it suitable for low power RFID application.