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PZT thick films for pressure sensors: Characterisation of materials and devices

机译:用于压力传感器的PZT厚膜:材料和设备的表征

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Different piezoelectric materials can be used in micro-electro-mechanical systems (MEMS) for transducers i.e. actuators and sensors of mechanical quantities. Lead zirconate titanates (PZTs) are the most common ceramic materials used as piezoelectric transducers. The ceramic MEMS are made by LTCC (Low Temperature Cofired Ceramic) and thick-film technology. They have been extensively used due to their superior piezoelectric properties. The use of thick-film PZT materials on LTCC substrate is not a trivial task due to the interaction between the printed PZT layers and the LTCC substrates during firing. The microstructural, electrical and piezoelectric characteristics of the thick PZT films on relatively inert alumina substrates and on LTCC tapes were studied. To minimise the possible interactions between glassy LTCC substrates and active PZT films for some samples the intermediate barrier layers were used. To characterise the thick PZT films on ceramic substrate the dielectric permittivities (ε), dielectric losses (tgδ), and piezoelectric coefficients (d33) were measured. The thick-film piezoelectric resonant pressure sensor on LTCC structure was designed and samples were fabricated (Figure 2). The thick-film PZT actuator on the ceramic diaphragm induces the vibration of the diaphragm at its resonant frequency. The applied pressure bends the diaphragm and generates additional stress, which shifts the resonant frequency. This is used as the output signal of the piezoelectric resonant pressure sensor. The resonant frequencies are shifted around 26 kHz. The calculated sensitivities are 2.5 Hz/kPa.
机译:在换能器即机械量的致动器和传感器的微机电系统(MEMS)中可以使用不同的压电材料。锆酸钛酸铅(PZT)是最常用作压电传感器的陶瓷材料。陶瓷MEMS由LTCC(低温共烧陶瓷)和厚膜技术制成。由于其优异的压电性能,它们已被广泛使用。由于在烧结过程中印刷的PZT层与LTCC基板之间的相互作用,因此在LTCC基板上使用厚膜PZT材料并不是一件容易的事。研究了相对惰性的氧化铝基材和LTCC胶带上厚PZT膜的微观结构,电学和压电特性。为了使某些样品的玻璃状LTCC基板和有源PZT膜之间的可能相互作用最小化,使用了中间阻挡层。为了表征陶瓷衬底上的厚PZT膜,测量了介电常数(ε),介电损耗(tgδ)和压电系数(d 33 )。设计了基于LTCC结构的厚膜压电谐振压力传感器,并制作了样品(图2)。陶瓷膜片上的厚膜PZT执行器会引起膜片在其共振频率处的振动。施加的压力会使膜片弯曲并产生额外的应力,从而改变谐振频率。这用作压电谐振压力传感器的输出信号。谐振频率偏移约26 kHz。计算出的灵敏度为2.5 Hz / kPa。

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