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BIST enhancement for detecting bit/byte write enable faults in SOC SRAMs

机译:BIST增强功能可检测SOC SRAM中的位/字节写使能故障

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The continued increase of the integration density of systems on chip (SoCs) and the number of embedded memory blocks in them, together with the continued technology scaling, increases their sensitivity to a variety of potential manufacturing (new) defects. Standard march tests are usually used to achieve a good fault/defect coverage. This paper presents an experiment in diagnosing defects in the circuitry responsible for the realization of bit, byte or group write enable in memories. First defects in such circuitry are analyzed, and fault models together with an appropriate test algorithm are presented. Subsequently, the test is added to an existing BIST engine to target the bit/byte write enable faults. The preliminary silicon results of two experiments are presented. They validate some of the targeted fault models and show the importance of considering bit/byte write enable faults for high outgoing product quality.
机译:片上系统(SoC)的集成密度和其中嵌入式存储器块的数量的持续增加,以及持续的技术扩展,提高了它们对各种潜在制造(新)缺陷的敏感性。通常使用标准行军测试来实现良好的故障/缺陷覆盖率。本文提出了一种诊断电路中缺陷的实验,该缺陷负责实现存储器中的位,字节或组写使能。分析了此类电路中的第一个缺陷,并提出了故障模型以及适当的测试算法。随后,将测试添加到现有的BIST引擎中,以解决位/字节写使能错误。给出了两个实验的初步硅结果。他们验证了一些目标故障模型,并显示了考虑使用位/字节写使能故障以提高产品质量的重要性。

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