Integrate LaOx-capping layer into metal gated CMOS devices using a gate-first approach for sub-45nm technology node and the device reliability thereof

摘要

This paper provides a comprehensive study on the integration of LaOx capping layer for sub-45nm metal gated CMOS devices with Hf-based high-K dielectrics in a gate first manner. Two different integration routes, i.e. Dual Metal Dual Dielectric flow (DMDD) and Single Metal Dual Dielectric (SMDD) flow, are reported and compared. The device reliability study is also provided.