Optical studies on high quality InGaAs/GaAs quantum dots

摘要

Summary form only given. We have performed photoluminescence (PL) and PL excitation (PLE) experiments on strain-induced InGaAs QDs showing remarkably high optical quality. As depicted schematically InP islands have been grown on an InGaAs-GaAs single quantum well structure leading to a strain-induced lateral potential profile of considerable energetic depth in the region below the InP stressors.