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Magneto-optical study of thermally annealed InAs-InGaAs-GaAs self-assembled quantum dots

机译:热退火Inas-InGaas-Gaas自组装量子点的磁光学研究

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摘要

We report a magneto-optical study of InAs-InGaAs-GaAs self-assembled quantum dots (QDs) subjected to post-growth thermal annealing at different temperatures. At low temperatures annealing strongly affects the bimodal distribution of QDs; at higher temperatures a strong blueshift of the emission occurs. Magnetophotoluminescence reveals that the annealing increases the QD size, with a larger effect occurring along the growth axis, and decreases the carrier effective masses. The main contribution to the blueshift is deduced to be an increase in the average Ga composition of the QDs. The inadvertent annealing which occurs during the growth of the upper AlGaAs cladding layer in laser structures is also studied.
机译:我们报告了InAs-InGaAs-GaAs自组装量子点(QDs)在不同温度下进行生长后热退火的磁光研究。在低温下,退火会严重影响量子点的双峰分布。在较高温度下,会发生强烈的发射蓝移。磁光致发光显示,退火增加了QD尺寸,沿着生长轴产生了更大的影响,并降低了载流子的有效质量。据推测,对蓝移的主要贡献是QD的平均Ga组成的增加。还研究了在激光结构中上层AlGaAs覆盖层的生长过程中发生的无意退火。

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