The effect of radiation defects on the localization of nitrogenimplanted into silicon

摘要

It has been shown using SIMS and X-ray diffraction that, duringannealing, the surface-oriented mass transport of nitrogen implantedinto silicon is affected by interstitial radiation defects. The masstransport is much more intense after high temperature implantation andbecomes predominant if the substrate was preliminarily bombarded withargon ions