Etch/metallization process sequence integration-impact of Altexture on Al etch performance

摘要

Very successful process sequence integration has been demonstratedwith Al etch/CVD/PVD-Al deposition. For CVD-Al with poor Al(111)texture, Al sidewall attack occurs at the CVD-Al/TiN-barrier interface.However, with a thin Ti layer on top of the CVD-TiN film, excellentCVD-Al(111) texture is produced without Al sidewall attack. Furthermore,Cu residue performance of CVD/PVD-Al-1.0%Cu is observed to be quitesimilar to that on PVD-Al-0.5%Cu. The impact of oxide substrate materialon Al etch performance is also addressed