METHOD OF FORMATING METAL LINE IN SEMICONDUCTOR FOR FORMING METAL LINE WITHOUT ADDITIONAL POLYMER GAS BY PERFORMING ETCH PROCESS USING HELIUM PRESSURE HIGHER THAN HELIUM PRESSURE USED IN ALUMINUM ETCH PROCESS

摘要

PURPOSE: A method of formating a metal line in a semiconductor is provided to form a metal line without additional polymer gas by performing an etch process using helium pressure higher than the helium pressure used in an aluminum etch process. CONSTITUTION: A stacked structure of a bottom Ti/TiN layer(20), an aluminum layer(30), and a top Ti/TiN layer(40) is formed on an oxide layer(10). An etch process is performed under helium pressure higher than the helium pressure used in an aluminum etch process. A stabilized metal line of an I-beam type or a notch type profile is formed by the etch process. The helium pressure of the etch process is high as much as 5 to 10 Torr in comparison with the helium pressure used in an aluminum etch process.