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Creating metal gate structures using Lithography-Etch-Lithography-Etch (LELE) processing sequences
Creating metal gate structures using Lithography-Etch-Lithography-Etch (LELE) processing sequences
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机译:使用光刻-蚀刻-光刻-蚀刻(LELE)处理序列创建金属栅极结构
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摘要
The invention can provide apparatus and methods of creating metal gate structures on wafers in real-time using Lithography-Etch-Lithography-Etch (LELE) processing sequence. Real-time data and/or historical data associated with LELE processing sequences can be fed forward and/or fed back as fixed variables or constrained variables in internal-Integrated-Metrology modules (i-IMM) to improve the accuracy of the metal gate structures.
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