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Creating metal gate structures using Lithography-Etch-Lithography-Etch (LELE) processing sequences

机译:使用光刻-蚀刻-光刻-蚀刻(LELE)处理序列创建金属栅极结构

摘要

The invention can provide apparatus and methods of creating metal gate structures on wafers in real-time using Lithography-Etch-Lithography-Etch (LELE) processing sequence. Real-time data and/or historical data associated with LELE processing sequences can be fed forward and/or fed back as fixed variables or constrained variables in internal-Integrated-Metrology modules (i-IMM) to improve the accuracy of the metal gate structures.
机译:本发明可以提供使用光刻-蚀刻-光刻-蚀刻(LELE)处理序列在晶片上实时创建金属栅极结构的设备和方法。可以将与LELE处理序列相关的实时数据和/或历史数据作为固定变量或约束变量在内部集成计量模块(i-IMM)中进行前馈和/或反馈,以提高金属浇口结构的准确性。

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