High current/temperature stress test on metal lines andinterconnections for GaAs MMICs

摘要

During a comprehensive reliability evaluation of GaAs MMICs(monolithic microwave integrated circuits), the reliability of metallines and interconnections has been extensively investigated by applyingseveral combinations of high temperature and current density, up to240° C and 60 MA/cm2, respectively. Test structuresincluded Ti/Pt/Au metallizations with various dimensions, and ohmiccontacts made of AuGeIn alloy. No significant degradation of Ti/Pt/Aumetals was found, while ohmic contacts showed electromigration effectsat very high applied stresses; by evaluating activation energy andcurrent density accelerating factor, these phenomena are predicted tohave negligible effects in actual operating conditions