Effects of semi-insulating gallium arsenide substrate properties onsilicon implanted active layer

摘要

Effects of carbon, boron, and EL2 concentrations in undopedsemi-insulating GaAs crystal on silicon-implanted active layers arequantitatively examined. The mechanisms for these effects areinvestigated. Reducing carbon and boron concentrations, growing crystalfrom a near-stoichiometric melt, and boule annealing all improve theuniformity in silicon-implanted active layers formed on undopedsemi-insulating GaAs substrates. Seed-to-tail uniformity within bouleand boule-to-boule uniformity are also improved. These undopedsemi-insulating GaAs substrates are promising for IC applications. Thereliable supply of GaAs substrates is moving high-performance GaAsdevices into manufacturing