Effects of Heat Treatment Duration and Dislocation Density on the transport Properties of Semi-insulating Gallium Arsenide Crystals

M. B. Lirvinova; S. V. Shutov; I. V. Boriskin

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Effects of Heat Treatment Duration and Dislocation Density on the transport Properties of Semi-insulating Gallium Arsenide Crystals

机译：热处理时间和位错密度对半绝缘砷化镓晶体输运性能的影响

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《Неорганические материалы》 |2001年第2期|p.146-149|共4页
作者
M. B. Lirvinova; S. V. Shutov; I. V. Boriskin;
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中图分类工程材料学;无机化学;
关键词
heaty treatment duration; dislocation density; gallium arsenide crystals;

机译：热处理时间;位错密度砷化镓晶体;

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专利

1. Effects of Heat-Treatment Duration and Dislocation Density on the Transport properties of Semi-insulating Gallium Arsenide Crystals [J] . M.B. Litvinova, S.V. Shutov, I.V. Boriskin Inorganic materials . 2001,第2期

机译：热处理时间和位错密度对半绝缘砷化镓晶体输运性能的影响
2. Effects of Heat Treatment Duration and Dislocation Density on the transport Properties of Semi-insulating Gallium Arsenide Crystals [J] . M. B. Lirvinova, S. V. Shutov, I. V. Boriskin Неорганические материалы . 2001,第2期

机译：热处理时间和位错密度对半绝缘砷化镓晶体输运性能的影响
3. Effects of Heat Treatment Duration and Dislocation Density on the Transport Properties of Semi-insulating Gallium Arsenide Crystals [J] . M.B.Litvinova, S.V.Shutov, I.V.Boriskin Неорганические материалы . 2001,第2期

机译：热处理时间和位错密度对半绝缘砷化镓晶体输运性能的影响
4. Growth and properties of very large crystals of semi-insulating gallium arsenide [C] . Ware, R.M., Higgins, Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1996. Technical Digest 1996., 18th Annual . 1996

机译：半绝缘砷化镓非常大的晶体的生长和性能
5. Comparison of substrate conditions in low-temperature gallium arsenide and semi-insulating gallium arsenide during terahertz pulse generation [D] . Alla, Arun Kumar 2011

机译：太赫兹脉冲产生过程中低温砷化镓和半绝缘砷化镓的衬底条件比较
6. Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide [O] . Domenico Melisi, Maria Angela Nitti, Marco Valentini, 2014

机译：在半绝缘砷化镓上通过喷涂技术沉积的基于碳纳米管的光电探测器
7. Optical properties of gallium arsenide/aluminum gallium arsenide and gallium aluminum indium arsenide/indium aluminum arsenide multiple quantum well and superlattice structures grown by molecular beam epitaxy. [O] . Pon Russell Michael. 1991

机译：分子束外延生长的砷化镓/铝砷化镓和砷化镓铝铟/砷化铝铝的多量子阱和超晶格结构的光学性质。
8. The Electrical Properties of 60 Kev Zinc Ions Implanted into Semi-Insulating Gallium Arsenide [R] . Littlejohn, M. A., Anikara, R. 1972

机译：60 Kev锌离子注入半绝缘砷化镓的电学特性

Effects of Heat Treatment Duration and Dislocation Density on the transport Properties of Semi-insulating Gallium Arsenide Crystals

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