Development of an integrated microelectrode/microelectronic device for brain implantable neuroengineering applications

摘要

An ultra-low power analog CMOS chip and a silicon based microelectrode array have been fully integrated to a microminiaturized "neuroport" for brain implantable neuroengineering applications. The CMOS IC included preamplifier and multiplexing circuitry, and a hybrid flip-chip bonding technique was developed to fabricate a functional , encapsulated microminiaturized neuroprobe device. As a proof-of-concept demonstration, we have measured local field potentials from thalamocortical brain slices of rats, suggesting that the new neuroport can form a prime platform for the development of a microminiaturized neural interface to the brain in a single implantable unit.