DEVELOPMENT OF EPITAXIAL TECHNOLOGY FOR MICROELECTRONICS AND LARGE AREA DEVICE APPLICATIONS.

摘要

Work has essentially been completed on PNPN lightsensitive matrices made by both oxide-masked epitaxy and by epitaxy-diffusion techniques. Matrices fabricated with the latter technique are considerably more sensitive,turning on with only 0.2foot-candles of incident illumination. (This sensitivity can be reduced with a subsequent improvement in uniformity from unit to unit.) Measurement methods are described,and light sensitivity results are given for both types of units. A search for the best method for making matched NPN-PNP transistor pairs has begun. A discussion of the pros and cons of all known methods is presented,with the conclusion that the beam lead process offers the most practical way to achieve such devices. A slowing down of this portion of the program will result to allow related company-funded beam lead developments to catch up with device fabrication developments under the contract. (Author)