Field effect microelectronics device able to form one or more transistor channels, for integrated circuit applications

摘要

A field effect microelectronics device comprises: (a) a substrate (500); and (b) at least one structure (602, 702) forming one or more channels (630a, 630b, 630c, 630d, 630e) able to connect, in the sense of their lengths, one or more sources and one or more drains, the structure being constructed from a stack in a direction orthogonal to a principle plane of the substrate with at least two bars of different length. Independent claims are also included for the following: (a) a field effect microelectronics device that also includes a gate covering at least partially the structure; and (b) the production of the field effect microelectronics device.