Modeling of arsenic transient enhanced diffusion and backgroundboron segregation in low-energy As+ implanted Si

摘要

Experimental results of As diffusion in B- and P-doped wafersrevealed the formation of As-B pairs with small binding energy comparedto P-B pairs. The existence of positively charged BI-pair and negativelycharged PI-pair was confirmed by the experiments of B and Predistribution near the As-tail region where the internal electric fieldoriginating from ionized As atoms affect background P and B profiles.For low-energy As implantation background B atoms were found tosegregate where no end-of-range dislocation loops exist