Suppression of transient enhanced diffusion in ion implanted silicon

摘要

The present invention provides a method for suppressing transient enhanced diffusion of ion implanted dopants in a semiconductor substrate comprising bombarding the substrate in a vacuum with a beam of bubble- forming ions at a first temperature, a first energy, and a first ion dose sufficient to form a dispersion of bubbles at a depth equivalent to a peak of damage distribution in the substrate from implantation of dopant ions into the substrate in a vacuum at a second temperature, a second energy, and a second ion dose, said dispersion being sufficient to reduce said damage distribution.