A highly-sensitive and low power SOI lateral thyristivemagnetometer

摘要

We report here a lateral magnetometer fabricated on SOI using 6masks. The sensor operates similar to a thyristor. With a supply voltageof 0.9 V and a total biasing current of 25 μA, the magnetometerachieves a relative sensitivity of 210%/Tesla and an absolutesensitivity of 105%/Tesla