Voltage controlled spectral response inn-SnO₂/a-SiC/metal photodetector

摘要

The authors discuss the realisation of n-SnO₂/a-SiC/Alphotodiodes with voltage-controlled spectral responses. The responsepeak is located at 480, 510 and 570 nm when the applied voltage is -4, 0and +4 Volts, respectively, while the corresponding quantum yield valuesare 17%, 3% and 25%. a-SiC photoconductivity, light-induced modulationof n+-SnO₂/a-SiC barrier height and primaryphotocurrent generation by interfacial recombination phenomena suggest asimple model to explain the observed behaviour