Epitaxial diamond Schottky barrier diode with on/off current ratiosin excess of 107 at high temperatures

摘要

Au-Schottky diodes have been fabricated on epitaxially growndiamond films on highly p-doped substrates. The forward characteristicsshow a low ideality factor and low series resistance. In reverse, asteadily increasing temperature activated excess leakage current isobserved. The analysis of this region has lead to a new defect model.These defects can be in part passivated by plasma pretreatment, leadingto significantly lower reverse currents and to the highest ever reportedon/off current ratios for epitaxial diamond diodes of up to 109 at high temperature