Conductance oscillations of a Si single electron transistor at roomtemperature

摘要

The single electron transistor (SET) is a key element in singleelectronics where device operation is based on one-by-one electronmanipulation utilizing the Coulomb blockade effect. However, SEToperation has so far been limited to below 4 K because even the smallestcapacitance C of the SET has been about 100 aF. This means therequirement of charging energy e2/(2C) being much larger thanthe thermal energy could only be met at very low temperatures. We reporthere a Si-SET whose capacitance is only about 2 aF. Owing to this smallcapacitance, the Si-SET shows conductance oscillation even at roomtemperature