Effect of Tunnel Resistance in the Strong Tunneling Regime on the Conductance of the Single Electron Transistors Fabricated Using Focused Ion Beam Etching; Conference paper

摘要

Ultra light and portable nano systems with integrated functionalities of sensing, data acquisition, data processing and communications will improve the effectiveness of electronic systems and potentially improve the decision making time in the battle field for the Land Warrior. Nanoelectronic devices form the building blocks of nanoscaled systems and require innovative technologies for their realization. The single electron transistor (SET) is a novel class of nano transistor which operates using quantum mechanical processes. Single electron transistors can be fabricated using methods like AFM nano oxidation, e-beam lithography, or shadow mask evaporation. Focused Ion Beam (FIB) based fabrication of SET devices is a novel method to produce SETs. SET based nano systems will enable potentially novel embedded applications to the Future Force Warriors (FFW) and Future Combat Systems (FCS). We report on the characterization of multiple SET devices in the strong tunneling regime. The effect of the magnitude of tunnel resistance on the conductance of the SET in the strong tunneling regime is studied and the experimental data is in close correlation with theory of strong tunneling. Characterization and understanding the SET device characteristics are vital for the realization of integrated nano scaled systems.