Experimental determination of hot-carrier energy distribution and minority carrier generation mechanism due to hot-carrier effects

摘要

Photon emission due to hot-carrier effect in MOSFETs is investigated in detail. Bias dependent photon intensity and its energy spectrum provide new findings about hot-carrier state in drain avalanche region. In particular, hot-carrier energy distribution is found to be a Maxwellian. The carrier temperature is evaluated from the energy spectrum experimentally, which is shown as a function of drain voltage. Minority carrier generation mechanism due to hot-carrier effect is discussed based upon photon mediated carrier generation model.