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Dynamic operation of the in-line cryotron in bistable circuits

机译:双稳态电路中串联低温电子管的动态运行

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The dynamic operation of the in-line cryotron is tested by performing pulse measurements on individual devices and also by using the device in free running closed loop oscillators (similar to shift register). The gain of the device is currently insufficient to permit bit transfer from one stage of the oscillator to the next in less than 25 nanoseconds. This propagation time is slow when compared to the 10 nanosecond circuit time constant L/R that was designed for each stage. The slower propagation is shown to be associated with the slow transition of resistance from the superconducting to the normal state and also from the normal to the superconducting state. Pulse measurements on the device indicate that the cryotron switching time is dependent upon the magnitude of the applied magnetic field. The times for switching resistance obtained from the pulse measurements are applied to the analysis of the dynamically operating closed loop register. The maximum oscillating frequency of 5 mc for a four stage closed register was predicted by the analysis and is shown to be in good agreement with the experiment. A similar analysis, using the same cryotron limitations, show the maximum frequency for a two stage closed ring register to be essentially the same as that for a four stage register. Again, this was verified experimentally. Thermal considerations, state-of-the-art fabrication, and testing procedures are discussed along with projected cryotron improvements that could lead to flip-flop time constants of about 10 nanoseconds.
机译:通过在单个设备上执行脉冲测量以及在自由运行的闭环振荡器(类似于移位寄存器)中使用该设备来测试在线低温电子管的动态操作。目前,该器件的增益不足以允许位在不到25纳秒的时间内从振荡器的一级传输到下一级。与为每个阶段设计的10纳秒电路时间常数L / R相比,此传播时间较慢。示出较慢的传播与电阻从超导状态到正常状态以及从正常状态到超导状态的缓慢过渡有关。设备上的脉冲测量结果表明,低温电子管的切换时间取决于所施加磁场的大小。从脉冲测量获得的开关电阻时间将用于动态操作的闭环寄存器的分析。通过分析预测了四级闭环寄存器的最大振荡频率为5 mc,表明与实验非常吻合。使用相同的低温致动器限制的类似分析显示,两级闭环寄存器的最大频率与四级寄存器的最大频率基本相同。再次,这已通过实验验证。讨论了散热方面的考虑,最先进的制造工艺和测试程序,以及预计的低温致冷器改进措施,这些改进措施可能会导致触发器时间常数约为10纳秒。

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