Design theory and exploratory development of the depletion layer transistor

摘要

The design theory of the Depletion Layer Transistor, which was first announced at WESCON, 1956, is outlined in all its major phases. The schematic models on which the analysis is based are presented, and the fundamental equations, which describe the carrier transport through the proposed structures, are formulated. Among the results to be discussed are expressions for available gain and an analysis of the stability problem. The theory is extended to describe operation at frequencies equal to or exceeding the reciprocal transit time of carriers through the structure.