21.5-dBm power-handling 5-GHz transmit/receive CMOS switch realized by voltage division effect of stacked transistor configuration with depletion-layer-extended transistors (DETs)

摘要

This paper reports a 21.5-dBm power-handling 5-GHz transmit/receive CMOS switch utilizing the depletion-layer-extended transistor (DET), which possesses high effective substrate resistance and enables the voltage division effect of the stacked transistor configuration to work in the CMOS switch. Furthermore, low insertion losses of 0.95 and 1.44 dB are accomplished at 5 GHz in the transmit and receive modes, respectively, with the benefit of the insertion-loss improvement effects in the DET. At the same time, high isolations of more than 22 dB were obtained at 5 GHz in the transmit and receive modes with the adoption of the shunt/series type circuit.