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Photolumineseence of In_xGa_xSb_1-y epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb

机译：In _{x Ga _{x Sb _{1-y 外延层的光致发光}}}

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《Electrical and Electronics Engineering, 2004. (ICEEE). 1st International Conference on 》||p.247-252|共6页
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Diaz-Reyes J.; Cardona-Bedoya J.A.; Mendoza-Alvarez J.; Manrique-Moreno S.; Galvan-Arellano M.; Hmera-Gomez M.L.; Ramirez-Cruz M.A.;
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1. Photoluminescence studies in highly Te-doped Ga1-xInxAsySb1-y epitaxial layers grown on GaSb by liquid phase epitaxy [J] . Diaz-Reyes J, Herrera-Perez JL, Gomez-Herrera ML, Applied Surface Science . 2004 ,第1a4期

机译：液相外延生长在GaSb上的高Te掺杂Ga1-xInxAsySb1-y外延层中的光致发光研究
2. Raman characterization of the In0.14Ga0.86As0.13Sb0.87 highly doped with Te grown on GaSb by liquid phase epitaxy [J] . Diaz-Reyes J, Lopez-Cruz E, Mendoza-Alvarez JG, Journal de Physique, IV: Proceedings of International Conference . 2006 ,第0期

机译：通过液相外延在GaSb上生长的高掺杂Te的In0.14Ga0.86As0.13Sb0.87的拉曼表征
3. Exciton recombination energy in spherical quantum dots on Ga_(1-x)In_xAS_ySb_(1-y)/GaSb grown by liquid-phase epitaxy [J] . R. Sanchez-Cano, L. Tirado-Mejia, G. Fonthal, Journal of Applied Physics . 2008 ,第11期

机译：液相外延生长的Ga_（1-x）In_xAS_ySb_（1-y）/ GaSb上球形量子点的激子复合能
4. Lattice vibrations study of In_xGa_(1-x)As_ySb_(1-y) quaternary alloys with low (In, As) content highly doped by tellurium grown by LPE [C] . J. Diaz-Reyes, E. Lopez-Cruz, J. G. Mendoza-Alvarez Advanced optical materials and devices (AOMD-6) . 2008

机译：LPE生长的碲高掺杂低（In，As）含量的In_xGa_（1-x）As_ySb_（1-y）四元合金的晶格振动研究
5. Surfactants control of surface process in gallium indium phosphide and gallium arsenide epitaxial layers grown by organometallic vapor phase epitaxy. [D] . Jun, Sung Won. 2001

机译：表面活性剂控制通过有机金属气相外延生长的磷化铟镓和砷化镓外延层的表面过程。
6. Electrical Properties of Midwave and Longwave InAs/GaSb Superlattices Grown on GaAs Substrates by Molecular Beam Epitaxy [O] . D. Benyahia, Ł. Kubiszyn, K. Michalczewski, 2018

机译：GaAs衬底上分子束外延生长的中波和长波InAs / GaSb超晶格的电学性质
7. Influence of Te impurity on morphology of GaSb epilayer grown on GaSb (001) patterned substrate by liquid phase epitaxy [O] . Zhang, G., Jayavel, P., Koyama, Tadanobu, 2004

机译：Te杂质对液相外延生长在GaSb（001）衬底上的GaSb外延层形貌的影响
8. P-type and N-type doping in GaSb and Ga(sub 0.8)In(sub 0.2)Sb layers grown by metalorganic vapor phase epitaxy [R] . Ehsani, H., Bhat, I., Hitchcock, C., 1998

机译：通过金属有机气相外延生长的Gasb和Ga（sub 0.8）In（sub 0.2）sb层中的p型和N型掺杂

Photolumineseence of InxGaxSb1-y epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb

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Photolumineseence of In_xGa_xSb_1-y epitaxial layers highly doped with tellurium grown by liquid phase epitaxy matched to GaSb