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Thermal Investigations of 3D FCBGA Packages with TSV Technology

机译:使用TSV技术的3D FCBGA封装的热研究

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摘要

With electronic package tends to be lighter, thinner and smaller, the design of multi-chip become more and more popular. Howev'er, multi-chip in a package also represents multiple heat sources that will result in high thermal dissipation and new technology is required to remove the heat effectively. The 3D stacked package with Through Silicon Via (TSV) technology is developed for chip to chip stacking in a package with superior electrical performance and suspected worse thermal performance than conventional stacking die structures. In this study, we present the thermal characteristic for System in Package (SiP) with TSV technology using the Finite Different Modeling (FDM) method. The SiP package has a memory chip stacking on FPGA that aims to reduce the placement and routing areas on board. The evaluation topics covered impacts of TSV and dummy bumps, power consumption variations, die size and package size effects. The results indicate that the package with TSV can perform better thermal performance of about 7% thermal improvement compare to the package without TSV. Besides, the influences of the TSV structure designs and material property options on thermal performance are investigated in the study.
机译:随着电子封装趋于更轻,更薄,更小,多芯片的设计变得越来越流行。然而,封装中的多芯片还代表着多种热源,这将导致高散热,因此需要采用新技术来有效地散热。采用硅穿孔(TSV)技术的3D堆叠封装专为芯片间堆叠而开发,具有比传统堆叠裸片结构优越的电气性能和可疑的热性能。在这项研究中,我们使用有限差分建模(FDM)方法,介绍了采用TSV技术的系统级封装(SiP)的热特性。 SiP封装在FPGA上堆叠了一个存储芯片,旨在减少板上的布局和布线面积。评估主题涵盖了TSV和虚拟凸块的影响,功耗变化,管芯尺寸和封装尺寸的影响。结果表明,与不带TSV的封装相比,带TSV的封装可以表现出更好的散热性能,约有7%的热改善。此外,研究了TSV结构设计和材料性能选项对热性能的影响。

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