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Photoresist Removal Requirements for Advanced Wafer Level Packaging Technology

机译:先进晶圆级封装技术的光刻胶去除要求

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It has been several years since wafer level packaging (WLP) technology has emerged, enabling the packaging industry to successfully fabricate smaller, more reliable modules. The use of this technology is expected to continue to grow in the future. One current WLP trend is to replace high lead solder bumps with lead-free solder bumps. Two of the more promising lead-free bumps are Cu-pillars and bumps. The use of the Cu-pillar/bump approach continues to increase as fabricators drive to increase yields, create more I/O pins per wafer thus resulting in finer bump pitch. The use of liquid photoresist (PR) and/or dry film photoresist (DFR) has become the standard for fine bump pitch formation. The major challenges in using these resists are 1) the effective removal of the resist without residue or redeposit; and 2) the compatibility of the removal chemistry with under bump materials (UBM). This paper will discuss WLP market trends, the technical requirements associated with PR/DFR removal, and conclude with some experimental results of advanced PR/DFR removal..
机译:晶圆级封装(WLP)技术的出现已经过去了数年,使封装行业能够成功地制造更小,更可靠的模块。预计该技术的使用将在未来继续增长。当前的WLP趋势是用无铅焊料块代替高铅焊料块。铜柱和凸块是两种更有前景的无铅凸块。随着制造商努力提高成品率,在每个晶圆上创建更多I / O引脚,Cu柱/凸块方法的使用继续增加。液体光刻胶(PR)和/或干膜光刻胶(DFR)的使用已成为形成细微凸点间距的标准。使用这些抗蚀剂的主要挑战是:1)有效去除抗蚀剂而不会残留或再沉积; 2)去除化学物质与凸块下材料(UBM)的相容性。本文将讨论WLP市场趋势,与PR / DFR去除相关的技术要求,并以高级PR / DFR去除的一些实验结果作为总结。

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