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Photoresist Removal Requirements for Advanced Wafer Level Packaging Technology

机译:高级晶圆级包装技术的光致抗蚀剂去除要求

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It has been several years since wafer level packaging (WLP) technology has emerged, enabling the packaging industry to successfully fabricate smaller, more reliable modules. The use of this technology is expected to continue to grow in the future. One current WLP trend is to replace high lead solder bumps with lead-free solder bumps. Two of the more promising lead-free bumps are Cu-pillars and bumps. The use of the Cu-pillar/bump approach continues to increase as fabricators drive to increase yields, create more I/O pins per wafer thus resulting in finer bump pitch. The use of liquid photoresist (PR) and/or dry film photoresist (DFR) has become the standard for fine bump pitch formation. The major challenges in using these resists are 1) the effective removal of the resist without residue or redeposit; and 2) the compatibility of the removal chemistry with under bump materials (UBM). This paper will discuss WLP market trends, the technical requirements associated with PR/DFR removal, and conclude with some experimental results of advanced PR/DFR removal..
机译:自晶圆级包装(WLP)技术出现了几年以来,使包装行业能够成功制造更小,更可靠的模块。预计该技术的使用将继续在未来增长。目前的WLP趋势是用无铅焊料凸块替换高铅焊料凸块。两个更有前途的无铅凸块是Cu-Pillars和凸块。由于制造商驱动以增加产量,使用Cu柱/凸块方法的使用继续增加,因此每个晶片产生更多I / O引脚,从而导致更细的凸块间距。使用液体光致抗蚀剂(PR)和/或干膜光致抗蚀剂(DFR)已成为细凸块间距形成的标准。使用这些抗蚀剂的主要挑战是1)无需残留物或重新停用的抗蚀剂的有效去除; 2)去除化学与凸块材料(UBM)的相容性。本文将讨论WLP市场趋势,与PR / DFR移除相关的技术要求,并结束于先进的PR / DFR拆卸的一些实验结果。

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