Status of the parasitic effects and reliability issues of InPelectron devices

摘要

Parasitic effects, degradation mechanisms, and related lifetimesare reviewed for InP electron devices (mainly high electron mobilitytransistors, or HEMTs, and heterojunction bipolar transistors, or HBTs)and compared with those obtained from similar GaAs-based devices. Theparasitic effects penalizing the IC integration of the InP-based HEMTare found to be very similar to those affecting the GaAs FET.Degradation mechanisms related to metallurgy have been clearlyidentified for InP electron devices. However, further investigationshave to be carried out in order to assess the surface and bulk-induceddegradations