Analysis of InP/InGaAs single and double heterostructure bipolartransistors for simultaneous high speed and high breakdownoperation

摘要

The authors present InP/InGaAs HBT (heterojunction bipolartransistor) characteristics with different collector materials anddoping profiles in view of high breakdown operation and possibly highspeed characteristics. The breakdown and speed characteristics ofInP/InGaAs HBTs were analyzed by drift-diffusion and Monte Carlomodeling, respectively. Important criteria for the speed-power tradeoffswere established and very satisfactory performance was found in gradeddouble HBTs