Defect behavior, carrier removal and predicted in-space injectionannealing of InP solar cells

摘要

Defect behavior, observed by deep level transient spectroscopy(DLTS), is used to predict carrier removal and the effects ofsimultaneous electron irradiation and injection annealing on theperformance of InP solar cells. For carrier removal, the number of holestrapped per defect is obtained from measurements of both carrierconcentrations and defect concentrations during an isochronal anneal. Inaddition, from kinetic considerations, the behavior of a dominant defectduring injection annealing is used to estimate the degradation expectedfrom exposure to the ambient electron environment in geostationary orbit