Demonstration of Ultra-Low Voltage and Ultra Low Power STT-MRAM designed for compatibility with 0x node embedded LLC applications

摘要

We present for the first time STT-MRAM devices with ultra low operating voltage and power compatible with next generation 0x node logic voltages. By engineering the tunnel barrier and improving the efficiency of the devices we report a record low writing voltage of 0.17V for a 1ppm error rate, which has been achieved for a 20ns write operation using a writing current of only 35uA. We further demonstrate error rates below 10^{-9 at voltage and current at 0.25V and 50uA using 10ns writing pulses on the same 30nm devices with extended 400C thermal budget while preserving functionality confirm the almost unlimited endurance of these data and retention at 85°C. Finally, TDDB studies confirm the almost unlimited endurance of these devices at the operating voltage.}