首页> 外国专利> Ultra-low power and ultra-low voltage bandgap voltage regulator device and method thereof

Ultra-low power and ultra-low voltage bandgap voltage regulator device and method thereof

机译:超低功耗超低压带隙稳压器装置及其方法

摘要

A family of bandgap embodiments are disclosed herein, capable of operating with very low currents and low power supply voltages, using neither any custom devices nor any special manufacturing technology, and fabricated on mainstream standard digital CMOS processes. As such, manufacturing cost can be kept low, manufacturing yields of digital CMOS system-on-a-chip (SOC) that require a reference can be kept optimal, and manufacturing risk can be minimized due to its flexibility with respect to fabrication process node-portability. Although the embodiments disclosed herein use novel techniques to achieve accurate operations with low power and low voltage, this family of bandgaps also uses parasitic bipolar junction transistors (BJT) available in low cost digital CMOS process to generate proportional and complementary to absolute temperature (PTAT and CTAT) voltages via the base-emitter voltage (VEB) of BJTs and scaling VEB differential pairs to generate the BJTs thermal voltage (VT).
机译:本文公开了一系列带隙实施例,其能够不使用任何定制装置或任何特殊制造技术而以非常低的电流和低的电源电压进行操作,并且在主流标准数字CMOS工艺上制造。这样,可以将制造成本保持在较低水平,可以将需要参考的数字CMOS片上系统(SOC)的制造成品率保持在最佳水平,并且由于其相对于制造工艺节点的灵活性,可以最大程度地降低制造风险-可移植性。尽管本文公开的实施例使用新颖的技术以低功率和低电压实现准确的操作,但是该带隙家族还使用低成本数字CMOS工艺中可用的寄生双极结晶体管(BJT)来产生与绝对温度成比例和互补的(PTAT和通过BJT的基极-发射极电压(V EB )电压和缩放V EB 差分对来生成BJT的热电压(V T )。

著录项

  • 公开/公告号US9780652B1

    专利类型

  • 公开/公告日2017-10-03

    原文格式PDF

  • 申请/专利权人 ALI TASDIGHI FAR;

    申请/专利号US201414163659

  • 发明设计人 ALI TASDIGHI FAR;

    申请日2014-01-24

  • 分类号H02M3/158;G05F3/08;G05F3/16;

  • 国家 US

  • 入库时间 2022-08-21 13:44:22

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