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CMOS Oscillator Having Stable Frequency with Process, Temperature and Voltage Variation

机译:频率,工艺和温度和电压变化均具有稳定频率的CMOS振荡器

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Clock generation is an extremely important part of any electronic system. At present Crystal oscillator is the most stable and reliable clock generation technique used as clock generation for any type of SoC. But this solution is very expensive and inconvenient for chip integration. Second option can be PLL based clock generation technique. Again PLL based techniques uses huge silicon area and high on-chip power. Further PLL based clocks need a reference clock for locking system. So we need a solution which can provide a stable clock against process, temperature and supply variations. CMOS Ring Oscillator provides a ready solution, but the biggest challenge with this kind of circuit is to achieve stable clock with temperature, process and supply voltage variations. This paper describes a symmetric oscillator structure, which provides an on-chip compensated clock against process, temperature and supply variations. This architecture is not one to one replacement of crystal oscillator or PLL but is very useful for many applications like on-chip charge-pump or DC-DC converters, clock required for modify pulse in Phase Change Memory etc. The oscillator is designed in BCD9S (110nm) process, to produce a stable frequency of 20 MHz, within a temperature range of -40 to 160oC and supply varying from 3V to 5.5V. The variation of frequency is within ±4.5% range and the circuit overall consumes an average current of 68μA.
机译:时钟生成是任何电子系统中极为重要的一部分。目前,晶体振荡器是最稳定,最可靠的时钟生成技术,可用于任何类型的SoC的时钟生成。但是该解决方案非常昂贵并且不便于芯片集成。第二种选择可以是基于PLL的时钟生成技术。同样,基于PLL的技术使用了巨大的硅面积和高片上功率。其他基于PLL的时钟需要用于锁定系统的参考时钟。因此,我们需要一种能够针对过程,温度和电源变化提供稳定时钟的解决方案。 CMOS环形振荡器提供了一种现成的解决方案,但是这种电路的最大挑战是如何在温度,工艺和电源电压变化的情况下实现稳定的时钟。本文介绍了一种对称振荡器结构,该结构可提供针对过程,温度和电源变化的片上补偿时钟。这种架构不是晶体振荡器或PLL的一对一替代,但对许多应用非常有用,例如片上电荷泵或DC-DC转换器,相变存储器中修改脉冲所需的时钟等。该振荡器是在BCD9S中设计的(110nm)工艺,可在-40至160oC的温度范围内产生20 MHz的稳定频率,并提供3V至5.5V的电源电压。频率变化在±4.5%的范围内,电路整体平均消耗68μA的电流。

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