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Fabrication and characterization of large area mercuric iodide polycrystalline films

机译:大面积碘化汞多晶膜的制备与表征

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Mercuric iodide (HgI_2) polycrystalline films are being developed as a new photoconductor layer for direct converter X-ray imaging detector. A physical vapor deposition (PVD) device for HgI_2 deposition was developed specially. Depending on the device and low purity (99.5%) low-cost HgI_2 source material, polycrystalline HgI_2 films have been grown with dimensions Φ130 mm in diameter onto ITO-coated glass substrate. The grown techniques used can be easily extended to produce much larger films areas and the thickness of the grown layers, size of the grains and crystallinity can be regulated in a controlled way by adjusting the growth parameters. The basic physical characteristic, dark current and response characteristic to X-ray for the grown polycrystalline film were tested and the results show that the film has preferred crystalline orientation (001), low dark current density less than 10 pA/mm~2, high volume resistivity in the order of 10~(13) Ω·cm and high X-ray response sensitivity of about 16 μC/(cm~2·R), and the results put HgI_2 polycrystalline films in position as a leading candidate material for use in digital X-ray imaging system.
机译:碘化汞(HgI_2)多晶膜正被开发为直接转换X射线成像检测器的新型光电导体层。专门开发了用于HgI_2沉积的物理气相沉积(PVD)装置。根据设备和低纯度(99.5%)的低成本HgI_2原料,已经在ITO涂层玻璃基板上生长了直径为Φ130mm的多晶HgI_2膜。所使用的生长技术可以轻松扩展以产生更大的薄膜面积,并且可以通过调节生长参数以受控方式调节生长层的厚度,晶粒尺寸和结晶度。测试了生长的多晶薄膜的基本物理特性,暗电流和对X射线的响应特性,结果表明该薄膜具有较好的晶向(001),暗电流密度低,小于10 pA / mm〜2,高。体积电阻率约为10〜(13)Ω·cm,高X射线响应灵敏度约为16μC/(cm〜2·R),结果将HgI_2多晶膜作为主要的候选材料使用在数字X射线成像系统中。

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