Sub 30 nm multi-bridge-channel MOSFET (MBCFET) with metal gate electrode for ultra high performance application

摘要

We have successfully fabricated sub 30nm N+ poly and TiN gate MBCFET (multi-bridge-channel field effect transistor) both on SOI wafers and bulk-Si wafers. Using TiN metal gate and 20nm multi bridge channels, we achieved the drive current of 2.3mA/μm that is the largest drive current ever reported for pMOSFETs with excellent subthreshold swing of 75mV/dec, and drain induce barrier lowering (DIBL) of 36mV/V. Large I_on/I_off ratio and excellent threshold voltage (V_t) distribution were obtained using TiN metal gate to eliminate channel ion implantation minimizing the mobility degradation and dopant fluctuation.