SiGe HBT technology with f_max/f_T=350/300 GHz and gate delay below 3.3 ps

摘要

This work reports on SiGe HBT technology with f_max and f_T of 350 GHz and 300 GHz, respectively, and a gate delay below 3.3 ps. This is the highest reported speed for any Si-based transistor in terms of combined performance of f_max and f_T both of which exhibit 300 GHz and above. Associated BV_CEO and BV_CBO are measured to be 1.7 V and 5.6 V, respectively. The dependence of device performance on bias condition and device dimension has been investigated. Considerations regarding the extraction of such high f_max and f_T values are also discussed.