In-plane mobility anisotropy and universality under uni-axial strains in nand p-MOS inversion layers on (100), 110, and (111) Si

机译：（100），110和（111）Si上的n和p-MOS反转层中单轴应变下的面内迁移率各向异性和通用性

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An investigation of the inversion layer mobility characteristics on conditions with systematic combinations of three key parameters: surface orientations, in-plane channel directions, and uni-axial strains, was performed. A guiding principle for an optimum combination of above three key parameters in terms of electron and hole mobility enhancement is presented. In addition, it is found experimentally that the definition of the mobility universality should be changed with surface orientations and applied uni-axial strains.

机译：研究了在三个关键参数（表面取向，面内通道方向和单轴应变）的系统组合条件下的反型层迁移率特性。提出了在电子和空穴迁移率增强方面上述三个关键参数的最佳组合的指导原则。另外，通过实验发现，迁移率通用性的定义应随表面取向和施加的单轴应变而改变。

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《Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International》||p.225-228|共4页
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Irie H.; Kita K.; Kyuno K.; Toriumi A.;
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In-plane mobility anisotropy and universality under uni-axial strains in nand p-MOS inversion layers on (100), 110, and (111) Si

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