Ellipsometric studies and scanning electron microscopy of Cd_(1-x)Mn _xTe films and layers modified by laser irradiation

摘要

The graphical-analytical method was used to find the solution of the inverse problem in ellipsometry for the systemconsisting of a transparent single-layer dielectric film on the Cd_(1-x)Mn_xTe crystal substrate. The nomograms in the -ellipsometric coordinates were simulated to determine the refractive index of the film and its thickness for differentincidence angles of the laser beam with 632.8 nm wavelength. The treatment of the Cd_(1-x)Mn_xTe (х=0.1-0.4) thin filmsand crystal surfaces was carried out with the millisecond (τ=1.5 ms) and nanosecond (τ=80 ns) laser. The structuralphasetransformations of the films and layers in the Cd-Mn-Te system were studied in the AFM and SEM, and theirellipsometric characteristics were determined using photometric laser ellipsometer. The heterogeneity of the thicknessand structure of the laser-modified Cd_(1-x)Mn_xTe surface layers were analyzed using calculated distribution of therefractive index of the films and its dependence on the incidence angle of the laser beam.