Transition metal dichalcogenides (TMDs) are among the most appealing candidates for sensor applications due to theiratomically thin layered structure, dangling bond free surface, and novel physical properties. Recently, TMD materialshave been used to improve the performance of devices like metal-oxide semiconductor field-effect transistors(MOSFETs) and tunneling field-effect transistors (TFETs). TMD material based TFETs show a steep subthreshold slope(SS) due to the better gate control on the channel and band-to-band tunneling transport. This makes the TMD TFETs apotential candidate for sensing devices. The steep SS of TFETs and higher gate control is useful for detecting chargedbiomolecules such as protein and DNA. The presented device shows a SS of 50 mV/decade for 5 decade change in draincurrent and a sensitivity (ΔI_(DS)/I_(DS)) of 2.11 for a 5 mV change in gate voltage. Biomolecules were detected by measuringthe variation of the drain current due to bimolecular charge.
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