Performance effects of two nitrogen incorporation techniques onTaN/HfO₂ and poly/HfO₂ MOSCAP and MOSFET devices

摘要

In the coming MOS generations, scaling trends will force thereplacement of SiO₂ as the gate dielectric. Due toconstraints - primarily high gate leakage current - SiO₂ willlikely be replaced by a high dielectric constant or high-k material.This paper will attempt to address some of the high-k material concernsby presenting promising results on HfO₂ stack structures withtwo forms of nitrogen incorporation - surface nitridation and topnitridation