Influence of SiO₂/Si(111) interface structure onoxidation rate

摘要

X-ray photoelectron studies on the changes inSiO₂/Si(111) interface structures and oxidation rates withthe progress of oxidation were performed for oxide films formed usingatomic oxygen at a substrate temperature of 400° C. The followingresults are obtained for the same oxidation condition: 1) an atomicallyuniform oxidation reaction occurs at the SiO₂/Si interface,2) the oxidation rate changes periodically with the progress ofoxidation and decreases significantly at specific interface structures.Therefore, it is revealed that the oxidation rate of Si is influenced bythe SiO₂/Si interface structure